First-Principles Studies for Electronic Structure and Optical Properties of p-Type Calcium Doped α-Ga(2)O(3)

Gallium oxide (Ga(2)O(3)) is a promising wide-band-gap semiconductor material for UV optical detectors and high-power transistor applications. The fabrication of p-type Ga(2)O(3) is a key problem that hinders its potential for realistic power applications. In this paper, pure α-Ga(2)O(3) and Ca-dope...

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Detalles Bibliográficos
Autores principales: Mondal, Abhay Kumar, Mohamed, Mohd Ambri, Ping, Loh Kean, Mohamad Taib, Mohamad Fariz, Samat, Mohd Hazrie, Mohammad Haniff, Muhammad Aniq Shazni, Bahru, Raihana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7866168/
https://www.ncbi.nlm.nih.gov/pubmed/33525586
http://dx.doi.org/10.3390/ma14030604

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7866168/
https://www.ncbi.nlm.nih.gov/pubmed/33525586
http://dx.doi.org/10.3390/ma14030604

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