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Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors
This study examines the effect of the annealing temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The extracted electrical parameters from transfer curves suggest that a low-temperature...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Beilstein-Institut
2019
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7869120/ https://www.ncbi.nlm.nih.gov/pubmed/33614381 http://dx.doi.org/10.3762/bjnano.10.112 |