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Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors

This study examines the effect of the annealing temperature on the initial electrical characteristics and photo-induced instabilities of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). The extracted electrical parameters from transfer curves suggest that a low-temperature...

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Detalles Bibliográficos
Autores principales:	Wang, Dapeng, Furuta, Mamoru
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Beilstein-Institut 2019
Materias:	Full Research Paper
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7869120/ https://www.ncbi.nlm.nih.gov/pubmed/33614381 http://dx.doi.org/10.3762/bjnano.10.112

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