NIR self-powered photodetection and gate tunable rectification behavior in 2D GeSe/MoSe(2) heterojunction diode

Two-dimensional (2D) heterostructure with atomically sharp interface holds promise for future electronics and optoelectronics because of their multi-functionalities. Here we demonstrate gate-tunable rectifying behavior and self-powered photovoltaic characteristics of novel p-GeSe/n-MoSe(2) van der w...

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Detalles Bibliográficos
Autores principales: Hussain, Muhammad, Jaffery, Syed Hassan Abbas, Ali, Asif, Nguyen, Cong Dinh, Aftab, Sikandar, Riaz, Muhammad, Abbas, Sohail, Hussain, Sajjad, Seo, Yongho, Jung, Jongwan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7878902/
https://www.ncbi.nlm.nih.gov/pubmed/33574562
http://dx.doi.org/10.1038/s41598-021-83187-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7878902/
https://www.ncbi.nlm.nih.gov/pubmed/33574562
http://dx.doi.org/10.1038/s41598-021-83187-z

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