Van der Waals engineering of ferroelectric heterostructures for long-retention memory

The limited memory retention for a ferroelectric field-effect transistor has prevented the commercialization of its nonvolatile memory potential using the commercially available ferroelectrics. Here, we show a long-retention ferroelectric transistor memory cell featuring a metal-ferroelectric-metal-...

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Detalles Bibliográficos
Autores principales: Wang, Xiaowei, Zhu, Chao, Deng, Ya, Duan, Ruihuan, Chen, Jieqiong, Zeng, Qingsheng, Zhou, Jiadong, Fu, Qundong, You, Lu, Liu, Song, Edgar, James H., Yu, Peng, Liu, Zheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7889872/
https://www.ncbi.nlm.nih.gov/pubmed/33597507
http://dx.doi.org/10.1038/s41467-021-21320-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7889872/
https://www.ncbi.nlm.nih.gov/pubmed/33597507
http://dx.doi.org/10.1038/s41467-021-21320-2

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