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Van der Waals engineering of ferroelectric heterostructures for long-retention memory

The limited memory retention for a ferroelectric field-effect transistor has prevented the commercialization of its nonvolatile memory potential using the commercially available ferroelectrics. Here, we show a long-retention ferroelectric transistor memory cell featuring a metal-ferroelectric-metal-...

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Autores principales: Wang, Xiaowei, Zhu, Chao, Deng, Ya, Duan, Ruihuan, Chen, Jieqiong, Zeng, Qingsheng, Zhou, Jiadong, Fu, Qundong, You, Lu, Liu, Song, Edgar, James H., Yu, Peng, Liu, Zheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7889872/
https://www.ncbi.nlm.nih.gov/pubmed/33597507
http://dx.doi.org/10.1038/s41467-021-21320-2
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author Wang, Xiaowei
Zhu, Chao
Deng, Ya
Duan, Ruihuan
Chen, Jieqiong
Zeng, Qingsheng
Zhou, Jiadong
Fu, Qundong
You, Lu
Liu, Song
Edgar, James H.
Yu, Peng
Liu, Zheng
author_facet Wang, Xiaowei
Zhu, Chao
Deng, Ya
Duan, Ruihuan
Chen, Jieqiong
Zeng, Qingsheng
Zhou, Jiadong
Fu, Qundong
You, Lu
Liu, Song
Edgar, James H.
Yu, Peng
Liu, Zheng
author_sort Wang, Xiaowei
collection PubMed
description The limited memory retention for a ferroelectric field-effect transistor has prevented the commercialization of its nonvolatile memory potential using the commercially available ferroelectrics. Here, we show a long-retention ferroelectric transistor memory cell featuring a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single crystals. Our device exhibits 17 mV dec(−1) operation, a memory window larger than 3.8 V, and program/erase ratio greater than 10(7). Thanks to the trap-free interfaces and the minimized depolarization effects via van der Waals engineering, more than 10(4) cycles endurance, a 10-year memory retention and sub-5 μs program/erase speed are achieved. A single pulse as short as 100 ns is enough for polarization reversal, and a 4-bit/cell operation of a van der Waals ferroelectric transistor is demonstrated under a 100 ns pulse train. These device characteristics suggest that van der Waals engineering is a promising direction to improve ferroelectronic memory performance and reliability for future applications.
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spelling pubmed-78898722021-03-03 Van der Waals engineering of ferroelectric heterostructures for long-retention memory Wang, Xiaowei Zhu, Chao Deng, Ya Duan, Ruihuan Chen, Jieqiong Zeng, Qingsheng Zhou, Jiadong Fu, Qundong You, Lu Liu, Song Edgar, James H. Yu, Peng Liu, Zheng Nat Commun Article The limited memory retention for a ferroelectric field-effect transistor has prevented the commercialization of its nonvolatile memory potential using the commercially available ferroelectrics. Here, we show a long-retention ferroelectric transistor memory cell featuring a metal-ferroelectric-metal-insulator-semiconductor architecture built from all van der Waals single crystals. Our device exhibits 17 mV dec(−1) operation, a memory window larger than 3.8 V, and program/erase ratio greater than 10(7). Thanks to the trap-free interfaces and the minimized depolarization effects via van der Waals engineering, more than 10(4) cycles endurance, a 10-year memory retention and sub-5 μs program/erase speed are achieved. A single pulse as short as 100 ns is enough for polarization reversal, and a 4-bit/cell operation of a van der Waals ferroelectric transistor is demonstrated under a 100 ns pulse train. These device characteristics suggest that van der Waals engineering is a promising direction to improve ferroelectronic memory performance and reliability for future applications. Nature Publishing Group UK 2021-02-17 /pmc/articles/PMC7889872/ /pubmed/33597507 http://dx.doi.org/10.1038/s41467-021-21320-2 Text en © The Author(s) 2021, corrected publication 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Wang, Xiaowei
Zhu, Chao
Deng, Ya
Duan, Ruihuan
Chen, Jieqiong
Zeng, Qingsheng
Zhou, Jiadong
Fu, Qundong
You, Lu
Liu, Song
Edgar, James H.
Yu, Peng
Liu, Zheng
Van der Waals engineering of ferroelectric heterostructures for long-retention memory
title Van der Waals engineering of ferroelectric heterostructures for long-retention memory
title_full Van der Waals engineering of ferroelectric heterostructures for long-retention memory
title_fullStr Van der Waals engineering of ferroelectric heterostructures for long-retention memory
title_full_unstemmed Van der Waals engineering of ferroelectric heterostructures for long-retention memory
title_short Van der Waals engineering of ferroelectric heterostructures for long-retention memory
title_sort van der waals engineering of ferroelectric heterostructures for long-retention memory
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7889872/
https://www.ncbi.nlm.nih.gov/pubmed/33597507
http://dx.doi.org/10.1038/s41467-021-21320-2
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