Cargando…

The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias

We present here, for the first time, a fabrication technique that allows manufacturing scallop free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturing as they enable 3D chip integration. Howeve...

Descripción completa

Detalles Bibliográficos
Autores principales: Frasca, Simone, Leghziel, Rebecca C., Arabadzhiev, Ivo N., Pasquier, Benoît, Tomassi, Grégoire F. M., Carrara, Sandro, Charbon, Edoardo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7890059/
https://www.ncbi.nlm.nih.gov/pubmed/33597624
http://dx.doi.org/10.1038/s41598-021-83546-w
_version_ 1783652434917195776
author Frasca, Simone
Leghziel, Rebecca C.
Arabadzhiev, Ivo N.
Pasquier, Benoît
Tomassi, Grégoire F. M.
Carrara, Sandro
Charbon, Edoardo
author_facet Frasca, Simone
Leghziel, Rebecca C.
Arabadzhiev, Ivo N.
Pasquier, Benoît
Tomassi, Grégoire F. M.
Carrara, Sandro
Charbon, Edoardo
author_sort Frasca, Simone
collection PubMed
description We present here, for the first time, a fabrication technique that allows manufacturing scallop free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturing as they enable 3D chip integration. However, the usual standardized TSV fabrication process has to deal with scalloping, an imperfection in the sidewalls caused by the deep reactive ion etching. The presence of scalloping causes stress and field concentration in the dielectric barrier, thereby dramatically impacting the following TSV filling step, which is performed by means of electrochemical plating. So, we propose here a new scallop free and non-tapered approach to overcome this challenge by adding a new step to the standard TSV procedure exploiting the crystalline orientation of silicon wafers. Thank to this new step, that we called “Michelangelo”, we obtained an extremely well polishing of the TSV holes, by reaching atomic-level smoothness and a record aspect ratio of 28:1. The Michelangelo step will thus drastically reduce the footprint of 3D structures and will allow unprecedented efficiency in 3D chip integration.
format Online
Article
Text
id pubmed-7890059
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-78900592021-02-22 The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias Frasca, Simone Leghziel, Rebecca C. Arabadzhiev, Ivo N. Pasquier, Benoît Tomassi, Grégoire F. M. Carrara, Sandro Charbon, Edoardo Sci Rep Article We present here, for the first time, a fabrication technique that allows manufacturing scallop free, non-tapered, high aspect ratio in through-silicon vias (TSVs) on silicon wafers. TSVs are among major technology players in modern high-volume manufacturing as they enable 3D chip integration. However, the usual standardized TSV fabrication process has to deal with scalloping, an imperfection in the sidewalls caused by the deep reactive ion etching. The presence of scalloping causes stress and field concentration in the dielectric barrier, thereby dramatically impacting the following TSV filling step, which is performed by means of electrochemical plating. So, we propose here a new scallop free and non-tapered approach to overcome this challenge by adding a new step to the standard TSV procedure exploiting the crystalline orientation of silicon wafers. Thank to this new step, that we called “Michelangelo”, we obtained an extremely well polishing of the TSV holes, by reaching atomic-level smoothness and a record aspect ratio of 28:1. The Michelangelo step will thus drastically reduce the footprint of 3D structures and will allow unprecedented efficiency in 3D chip integration. Nature Publishing Group UK 2021-02-17 /pmc/articles/PMC7890059/ /pubmed/33597624 http://dx.doi.org/10.1038/s41598-021-83546-w Text en © The Author(s) 2021 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Frasca, Simone
Leghziel, Rebecca C.
Arabadzhiev, Ivo N.
Pasquier, Benoît
Tomassi, Grégoire F. M.
Carrara, Sandro
Charbon, Edoardo
The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
title The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
title_full The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
title_fullStr The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
title_full_unstemmed The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
title_short The Michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
title_sort michelangelo step: removing scalloping and tapering effects in high aspect ratio through silicon vias
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7890059/
https://www.ncbi.nlm.nih.gov/pubmed/33597624
http://dx.doi.org/10.1038/s41598-021-83546-w
work_keys_str_mv AT frascasimone themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT leghzielrebeccac themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT arabadzhievivon themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT pasquierbenoit themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT tomassigregoirefm themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT carrarasandro themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT charbonedoardo themichelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT frascasimone michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT leghzielrebeccac michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT arabadzhievivon michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT pasquierbenoit michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT tomassigregoirefm michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT carrarasandro michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias
AT charbonedoardo michelangelostepremovingscallopingandtaperingeffectsinhighaspectratiothroughsiliconvias