Noise Tailoring in Memristive Filaments

[Image: see text] In this study, the possibilities of noise tailoring in filamentary resistive switching memory devices are investigated. To this end, the resistance and frequency scaling of the low-frequency 1/f-type noise properties are studied in representative mainstream material systems. It is...

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Detalles Bibliográficos
Autores principales: Sánta, Botond, Balogh, Zoltán, Pósa, László, Krisztián, Dávid, Török, Tímea Nóra, Molnár, Dániel, Sinkó, Csaba, Hauert, Roland, Csontos, Miklós, Halbritter, András
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7899176/
https://www.ncbi.nlm.nih.gov/pubmed/33533590
http://dx.doi.org/10.1021/acsami.0c21156

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7899176/
https://www.ncbi.nlm.nih.gov/pubmed/33533590
http://dx.doi.org/10.1021/acsami.0c21156

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