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Noise Tailoring in Memristive Filaments
[Image: see text] In this study, the possibilities of noise tailoring in filamentary resistive switching memory devices are investigated. To this end, the resistance and frequency scaling of the low-frequency 1/f-type noise properties are studied in representative mainstream material systems. It is...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2021
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7899176/ https://www.ncbi.nlm.nih.gov/pubmed/33533590 http://dx.doi.org/10.1021/acsami.0c21156 |