Study of patterned GaAsSbN nanowires using sigmoidal model

This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large bandgap tuni...

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Detalles Bibliográficos
Autores principales: Johnson, Sean, Pokharel, Rabin, Lowe, Michael, Kuchoor, Hirandeep, Nalamati, Surya, Davis, Klinton, Rathnayake, Hemali, Iyer, Shanthi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7907112/
https://www.ncbi.nlm.nih.gov/pubmed/33633245
http://dx.doi.org/10.1038/s41598-021-83973-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7907112/
https://www.ncbi.nlm.nih.gov/pubmed/33633245
http://dx.doi.org/10.1038/s41598-021-83973-9

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