Cargando…
Study of patterned GaAsSbN nanowires using sigmoidal model
This study presents the first report on patterned nanowires (NWs) of dilute nitride GaAsSbN on p-Si (111) substrates by self-catalyzed plasma-assisted molecular beam epitaxy. Patterned NW array with GaAsSbN of Sb composition of 3% as a stem provided the best yield of vertical NWs. Large bandgap tuni...
| Autores principales: | , , , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7907112/ https://www.ncbi.nlm.nih.gov/pubmed/33633245 http://dx.doi.org/10.1038/s41598-021-83973-9 |