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Effectiveness of Electrical and Optical Detection at Pixel Circuit on Thin-Film Transistors

The paper presents a typology of electrical open and short defects on thin-film transistors (TFT) using an electrical tester and automatic optical inspection (AOI). The experiment takes the glass 8.5th generation to detect the electrical characteristics engaged with time delay and integration (TDI)...

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Detalles Bibliográficos
Autor principal: Tzu, Fu-Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7910850/
https://www.ncbi.nlm.nih.gov/pubmed/33513890
http://dx.doi.org/10.3390/mi12020135
Descripción
Sumario:The paper presents a typology of electrical open and short defects on thin-film transistors (TFT) using an electrical tester and automatic optical inspection (AOI). The experiment takes the glass 8.5th generation to detect the electrical characteristics engaged with time delay and integration (TDI) charged-coupled-devices (CCDs), a fast line-scan, and a review CCD with five sets of magnification lenses for further inspection. An automatic data acquisition program (ADAP) controls the open/short (O/S) sensor, TDI-CCD, and motor device for machine vision and statistics of substrate defects simultaneously. Furthermore, the quartz mask installed on AOI verified its optical resolution; a TDI-CCD can grab an image of a moving object during transfers of the charge in synchronous scanning with the object that is significant.