Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs

A 16-nm-L(g) p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as wel...

Descripción completa

Detalles Bibliográficos
Autores principales: Gu, Jie, Zhang, Qingzhu, Wu, Zhenhua, Yao, Jiaxin, Zhang, Zhaohao, Zhu, Xiaohui, Wang, Guilei, Li, Junjie, Zhang, Yongkui, Cai, Yuwei, Xu, Renren, Xu, Gaobo, Xu, Qiuxia, Yin, Huaxiang, Luo, Jun, Wang, Wenwu, Ye, Tianchun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911106/
https://www.ncbi.nlm.nih.gov/pubmed/33530292
http://dx.doi.org/10.3390/nano11020309

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911106/
https://www.ncbi.nlm.nih.gov/pubmed/33530292
http://dx.doi.org/10.3390/nano11020309

Ejemplares similares