Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

In this work, a ZnO-based resistive switching memory device is characterized by using simplified electrical conduction models. The conventional bipolar resistive switching and complementary resistive switching modes are accomplished by tuning the bias voltage condition. The material and chemical inf...

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Detalles Bibliográficos
Autores principales: Khan, Sobia Ali, Lee, Geun Ho, Mahata, Chandreswar, Ismail, Muhammad, Kim, Hyungjin, Kim, Sungjun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911158/
https://www.ncbi.nlm.nih.gov/pubmed/33513672
http://dx.doi.org/10.3390/nano11020315

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911158/
https://www.ncbi.nlm.nih.gov/pubmed/33513672
http://dx.doi.org/10.3390/nano11020315

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