The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper. We find that the etching process will cause the two-dimensional electron gas (2DEG) and the mobility of the p-GaN HEMT to decrease....

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Detalles Bibliográficos
Autores principales: Niu, Di, Wang, Quan, Li, Wei, Chen, Changxi, Xu, Jiankai, Jiang, Lijuan, Feng, Chun, Xiao, Hongling, Wang, Qian, Xu, Xiangang, Wang, Xiaoliang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911281/
https://www.ncbi.nlm.nih.gov/pubmed/33530451
http://dx.doi.org/10.3390/mi12020131

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911281/
https://www.ncbi.nlm.nih.gov/pubmed/33530451
http://dx.doi.org/10.3390/mi12020131

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