Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells

From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechan...

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Detalles Bibliográficos
Autores principales: Shoji, Yasushi, Tamaki, Ryo, Okada, Yoshitaka
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911294/
https://www.ncbi.nlm.nih.gov/pubmed/33573008
http://dx.doi.org/10.3390/nano11020344

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911294/
https://www.ncbi.nlm.nih.gov/pubmed/33573008
http://dx.doi.org/10.3390/nano11020344

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