Cargando…
Temperature Dependence of Carrier Extraction Processes in GaSb/AlGaAs Quantum Nanostructure Intermediate-Band Solar Cells
From the viewpoint of band engineering, the use of GaSb quantum nanostructures is expected to lead to highly efficient intermediate-band solar cells (IBSCs). In IBSCs, current generation via two-step optical excitations through the intermediate band is the key to the operating principle. This mechan...
Autores principales: | Shoji, Yasushi, Tamaki, Ryo, Okada, Yoshitaka |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7911294/ https://www.ncbi.nlm.nih.gov/pubmed/33573008 http://dx.doi.org/10.3390/nano11020344 |
Ejemplares similares
-
Band-inverted gaps in InAs/GaSb and GaSb/InAs core-shell nanowires
por: Luo, Ning, et al.
Publicado: (2016) -
Carrier dynamics in (Ga,In)(Sb,Bi)/GaSb quantum wells for laser applications in the mid-infrared spectral range
por: Rogowicz, E., et al.
Publicado: (2022) -
Optical Properties of GaSb Nanofibers
por: Zhou, Xiuli, et al.
Publicado: (2010) -
Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center
por: Faul, J, et al.
Publicado: (1993) -
Evolution of morphology and microstructure of GaAs/GaSb nanowire heterostructures
por: Shi, Suixing, et al.
Publicado: (2015)