Stable and Multilevel Data Storage Resistive Switching of Organic Bulk Heterojunction

Organic nonvolatile memory devices have a vital role for the next generation of electrical memory units, due to their large scalability and low-cost fabrication techniques. Here, we show bipolar resistive switching based on an Ag/ZnO/P3HT-PCBM/ITO device in which P3HT-PCBM acts as an organic heteroj...

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Detalles Bibliográficos
Autores principales: Patil, Harshada, Kim, Honggyun, Rehman, Shania, Kadam, Kalyani D., Aziz, Jamal, Khan, Muhammad Farooq, Kim, Deok-kee
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7912748/
https://www.ncbi.nlm.nih.gov/pubmed/33535529
http://dx.doi.org/10.3390/nano11020359

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7912748/
https://www.ncbi.nlm.nih.gov/pubmed/33535529
http://dx.doi.org/10.3390/nano11020359

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