Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor

The raised source/drain (RSD) structure is one of thin film transistor designs that is often used to improve device characteristics. Many studies have mentioned that the high impact ionization rate occurring at a drain side can be reduced, owing to a raised source/drain area that can disperse the dr...

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Detalles Bibliográficos
Autores principales: Chien, Feng-Tso, Ye, Jing, Yen, Wei-Cheng, Chen, Chii-Wen, Lin, Cheng-Li, Tsai, Yao-Tsung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7912821/
https://www.ncbi.nlm.nih.gov/pubmed/33535664
http://dx.doi.org/10.3390/membranes11020103

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7912821/
https://www.ncbi.nlm.nih.gov/pubmed/33535664
http://dx.doi.org/10.3390/membranes11020103

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