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Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor
The raised source/drain (RSD) structure is one of thin film transistor designs that is often used to improve device characteristics. Many studies have mentioned that the high impact ionization rate occurring at a drain side can be reduced, owing to a raised source/drain area that can disperse the dr...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7912821/ https://www.ncbi.nlm.nih.gov/pubmed/33535664 http://dx.doi.org/10.3390/membranes11020103 |
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author | Chien, Feng-Tso Ye, Jing Yen, Wei-Cheng Chen, Chii-Wen Lin, Cheng-Li Tsai, Yao-Tsung |
author_facet | Chien, Feng-Tso Ye, Jing Yen, Wei-Cheng Chen, Chii-Wen Lin, Cheng-Li Tsai, Yao-Tsung |
author_sort | Chien, Feng-Tso |
collection | PubMed |
description | The raised source/drain (RSD) structure is one of thin film transistor designs that is often used to improve device characteristics. Many studies have mentioned that the high impact ionization rate occurring at a drain side can be reduced, owing to a raised source/drain area that can disperse the drain electric field. In this study, we will discuss how the electric field at the drain side of an RSD device is reduced by a vertical lightly doped drain (LDD) scheme rather than a RSD structure. We used different raised source/drain forms to simulate the drain side electric field for each device, as well as their output characteristics, using Integrated Systems Engineering (ISE-TCAD) simulators. Different source and drain thicknesses and doping profiles were applied to verify the RSD mechanism. We found that the electric fields of a traditional device and uniform doping RSD structures are almost the same (~2.9 × 10(5) V/cm). The maximum drain electric field could be reduced to ~2 × 10(5) V/cm if a vertical lightly doped drain RSD scheme was adopted. A pure raised source/drain structure did not benefit the device characteristics if a vertical lightly doped drain design was not included in the raised source/drain areas. |
format | Online Article Text |
id | pubmed-7912821 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-79128212021-02-28 Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor Chien, Feng-Tso Ye, Jing Yen, Wei-Cheng Chen, Chii-Wen Lin, Cheng-Li Tsai, Yao-Tsung Membranes (Basel) Article The raised source/drain (RSD) structure is one of thin film transistor designs that is often used to improve device characteristics. Many studies have mentioned that the high impact ionization rate occurring at a drain side can be reduced, owing to a raised source/drain area that can disperse the drain electric field. In this study, we will discuss how the electric field at the drain side of an RSD device is reduced by a vertical lightly doped drain (LDD) scheme rather than a RSD structure. We used different raised source/drain forms to simulate the drain side electric field for each device, as well as their output characteristics, using Integrated Systems Engineering (ISE-TCAD) simulators. Different source and drain thicknesses and doping profiles were applied to verify the RSD mechanism. We found that the electric fields of a traditional device and uniform doping RSD structures are almost the same (~2.9 × 10(5) V/cm). The maximum drain electric field could be reduced to ~2 × 10(5) V/cm if a vertical lightly doped drain RSD scheme was adopted. A pure raised source/drain structure did not benefit the device characteristics if a vertical lightly doped drain design was not included in the raised source/drain areas. MDPI 2021-02-01 /pmc/articles/PMC7912821/ /pubmed/33535664 http://dx.doi.org/10.3390/membranes11020103 Text en © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Chien, Feng-Tso Ye, Jing Yen, Wei-Cheng Chen, Chii-Wen Lin, Cheng-Li Tsai, Yao-Tsung Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor |
title | Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor |
title_full | Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor |
title_fullStr | Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor |
title_full_unstemmed | Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor |
title_short | Raised Source/Drain (RSD) and Vertical Lightly Doped Drain (LDD) Poly-Si Thin-Film Transistor |
title_sort | raised source/drain (rsd) and vertical lightly doped drain (ldd) poly-si thin-film transistor |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7912821/ https://www.ncbi.nlm.nih.gov/pubmed/33535664 http://dx.doi.org/10.3390/membranes11020103 |
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