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Two-Color Infrared Sensor on the PbTe: In p-n Junction
A lead telluride sensor was fabricated on the base of a p-n PbTe junction created on a PbTe single crystal grown by the Czochralski technique, followed by the diffusion of an indium donor impurity into a crystal. The capacitance-voltage and current-voltage characteristics of the sensor were measured...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7914514/ https://www.ncbi.nlm.nih.gov/pubmed/33567680 http://dx.doi.org/10.3390/s21041195 |