Radiation Tolerance and Charge Trapping Enhancement of ALD HfO(2)/Al(2)O(3) Nanolaminated Dielectrics

High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investi...

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Detalles Bibliográficos
Autores principales: Spassov, Dencho, Paskaleva, Albena, Guziewicz, Elżbieta, Davidović, Vojkan, Stanković, Srboljub, Djorić-Veljković, Snežana, Ivanov, Tzvetan, Stanchev, Todor, Stojadinović, Ninoslav
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7919267/
https://www.ncbi.nlm.nih.gov/pubmed/33578892
http://dx.doi.org/10.3390/ma14040849

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7919267/
https://www.ncbi.nlm.nih.gov/pubmed/33578892
http://dx.doi.org/10.3390/ma14040849

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