Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator

An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverte...

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Detalles Bibliográficos
Autores principales: Chen, Yuan-Ming, Lin, Hsien-Cheng, Lee, Kuan-Wei, Wang, Yeong-Her
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7921913/
https://www.ncbi.nlm.nih.gov/pubmed/33670823
http://dx.doi.org/10.3390/ma14040970

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7921913/
https://www.ncbi.nlm.nih.gov/pubmed/33670823
http://dx.doi.org/10.3390/ma14040970

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