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Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator

An inverted-type InAlAs/InAs metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) with liquid phase oxidized (LPO) InAlAs as the gate insulator is demonstrated. A thin InAs layer is inserted in the sub-channel layers of InGaAs to enhance the device performance. The proposed inverte...

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Detalles Bibliográficos
Autores principales:	Chen, Yuan-Ming, Lin, Hsien-Cheng, Lee, Kuan-Wei, Wang, Yeong-Her
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7921913/ https://www.ncbi.nlm.nih.gov/pubmed/33670823 http://dx.doi.org/10.3390/ma14040970

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