Epitaxial Growth and Characterization of 4H-SiC for Neutron Detection Applications

The purpose of this work is to study the 4H-SiC epitaxial layer properties for the fabrication of a device for neutron detection as an alternative material to diamond detectors used in this field. We have studied a high growth rate process to grow a thick epitaxial layer (250 µm) of 4H-SiC and, in o...

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Detalles Bibliográficos
Autores principales: Meli, Alessandro, Muoio, Annamaria, Trotta, Antonio, Meda, Laura, Parisi, Miriam, La Via, Francesco
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7922429/
https://www.ncbi.nlm.nih.gov/pubmed/33669492
http://dx.doi.org/10.3390/ma14040976

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7922429/
https://www.ncbi.nlm.nih.gov/pubmed/33669492
http://dx.doi.org/10.3390/ma14040976

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