Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress

In this study we present the new power electronic circuit implementation to create the arbitrary near-rectangular electromagnetic pulse. To this end, we develop a parallel- Insulated-gate bipolar transistors (IGBT)-based magnetic pulse generator utilizing the H-bridge architecture. This approach eff...

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Detalles Bibliográficos
Autores principales: Memarian Sorkhabi, Majid, Wendt, Karen, Rogers, Daniel, Denison, Timothy
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer International Publishing 2021
Materias:
Research Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7925468/
https://www.ncbi.nlm.nih.gov/pubmed/33748674
http://dx.doi.org/10.1007/s42452-021-04420-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7925468/
https://www.ncbi.nlm.nih.gov/pubmed/33748674
http://dx.doi.org/10.1007/s42452-021-04420-y

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