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Paralleling insulated-gate bipolar transistors in the H-bridge structure to reduce current stress
In this study we present the new power electronic circuit implementation to create the arbitrary near-rectangular electromagnetic pulse. To this end, we develop a parallel- Insulated-gate bipolar transistors (IGBT)-based magnetic pulse generator utilizing the H-bridge architecture. This approach eff...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer International Publishing
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7925468/ https://www.ncbi.nlm.nih.gov/pubmed/33748674 http://dx.doi.org/10.1007/s42452-021-04420-y |