Near-ideal van der Waals rectifiers based on all-two-dimensional Schottky junctions

The applications of any two-dimensional (2D) semiconductor devices cannot bypass the control of metal-semiconductor interfaces, which can be severely affected by complex Fermi pinning effects and defect states. Here, we report a near-ideal rectifier in the all-2D Schottky junctions composed of the 2...

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Detalles Bibliográficos
Autores principales: Zhang, Xiankun, Liu, Baishan, Gao, Li, Yu, Huihui, Liu, Xiaozhi, Du, Junli, Xiao, Jiankun, Liu, Yihe, Gu, Lin, Liao, Qingliang, Kang, Zhuo, Zhang, Zheng, Zhang, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7943806/
https://www.ncbi.nlm.nih.gov/pubmed/33750797
http://dx.doi.org/10.1038/s41467-021-21861-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7943806/
https://www.ncbi.nlm.nih.gov/pubmed/33750797
http://dx.doi.org/10.1038/s41467-021-21861-6

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