Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors

Twist-engineering of the electronic structure in van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore...

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Detalles Bibliográficos
Autores principales: Lin, Kai-Qiang, Faria Junior, Paulo E., Bauer, Jonas M., Peng, Bo, Monserrat, Bartomeu, Gmitra, Martin, Fabian, Jaroslav, Bange, Sebastian, Lupton, John M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7946969/
https://www.ncbi.nlm.nih.gov/pubmed/33692339
http://dx.doi.org/10.1038/s41467-021-21547-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7946969/
https://www.ncbi.nlm.nih.gov/pubmed/33692339
http://dx.doi.org/10.1038/s41467-021-21547-z

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