Cargando…

Twist-angle engineering of excitonic quantum interference and optical nonlinearities in stacked 2D semiconductors

Twist-engineering of the electronic structure in van-der-Waals layered materials relies predominantly on band hybridization between layers. Band-edge states in transition-metal-dichalcogenide semiconductors are localized around the metal atoms at the center of the three-atom layer and are therefore...

Descripción completa

Detalles Bibliográficos
Autores principales:	Lin, Kai-Qiang, Faria Junior, Paulo E., Bauer, Jonas M., Peng, Bo, Monserrat, Bartomeu, Gmitra, Martin, Fabian, Jaroslav, Bange, Sebastian, Lupton, John M.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7946969/ https://www.ncbi.nlm.nih.gov/pubmed/33692339 http://dx.doi.org/10.1038/s41467-021-21547-z

Ejemplares similares

Stacking angle-tunable photoluminescence from interlayer exciton states in twisted bilayer graphene
por: Patel, Hiral, et al.
Publicado: (2019)

Narrow-band high-lying excitons with negative-mass electrons in monolayer WSe(2)
por: Lin, Kai-Qiang, et al.
Publicado: (2021)

Giant optical nonlinearities from Rydberg excitons in semiconductor microcavities
por: Walther, Valentin, et al.
Publicado: (2018)

Twist Angle Tuning of Moiré Exciton Polaritons in van der Waals Heterostructures
por: Fitzgerald, Jamie M., et al.
Publicado: (2022)

Identification of twist-angle-dependent excitons in WS(2)/WSe(2) heterobilayers
por: Wu, Ke, et al.
Publicado: (2021)

Strong Photocurrent from Two-Dimensional Excitons in Solution-Processed Stacked Perovskite Semiconductor Sheets
por: Ahmad, Shahab, et al.
Publicado: (2015)

Manipulating nonlinear exciton polaritons in an atomically-thin semiconductor with artificial potential landscapes
por: Luo, Yuan, et al.
Publicado: (2023)

Twist-angle dependence of moiré excitons in WS(2)/MoSe(2) heterobilayers
por: Zhang, Long, et al.
Publicado: (2020)

Exciton and domain luminescence of semiconductor
por: Basov, N
Publicado: (1979)

Optimizing exciton transport in semiconductors
por: Embley, Jacob, et al.
Publicado: (2021)

Radiative suppression of exciton–exciton annihilation in a two-dimensional semiconductor
por: Sortino, Luca, et al.
Publicado: (2023)

Exciton transport in atomically thin semiconductors
por: Malic, Ermin, et al.
Publicado: (2023)

Twist-angle-dependent momentum-space direct and indirect interlayer excitons in WSe(2)/WS(2) heterostructure
por: Chen, Jiajun, et al.
Publicado: (2023)

Signatures of Electric Field and Layer Separation Effects on the Spin-Valley Physics of MoSe(2)/WSe(2) Heterobilayers: From Energy Bands to Dipolar Excitons
por: Faria Junior, Paulo E., et al.
Publicado: (2023)

Nonlinear plasmon-exciton coupling enhances sum-frequency generation from a hybrid metal/semiconductor nanostructure
por: Zhong, Jin-Hui, et al.
Publicado: (2020)

Quasi-1D exciton channels in strain-engineered 2D materials
por: Dirnberger, Florian, et al.
Publicado: (2021)

Photonic-crystal exciton-polaritons in monolayer semiconductors
por: Zhang, Long, et al.
Publicado: (2018)

Directed exciton transport highways in organic semiconductors
por: Müller, Kai, et al.
Publicado: (2023)

Bose-Einstein condensation of excitons and biexcitons and coherent nonlinear optics with excitons
por: Moskalenko, S A, et al.
Publicado: (1999)

Fast Twist Angle Mapping of Bilayer Graphene Using Spectroscopic Ellipsometric Contrast Microscopy
por: Potočnik, Teja, et al.
Publicado: (2023)

Twist-Dependent Tuning of Excitonic Emissions in Bilayer WSe(2)
por: Barman, Prahalad Kanti, et al.
Publicado: (2022)

Excitonic insulator to superconductor phase transition in ultra-compressed helium
por: Liu, Cong, et al.
Publicado: (2023)

Exciton Condensation in Molecular-Scale van der Waals Stacks
por: Schouten, Anna O., et al.
Publicado: (2021)

Exciton fission in monolayer transition metal dichalcogenide semiconductors
por: Steinhoff, A., et al.
Publicado: (2017)

Valley coherent exciton-polaritons in a monolayer semiconductor
por: Dufferwiel, S., et al.
Publicado: (2018)

The ultrafast onset of exciton formation in 2D semiconductors
por: Trovatello, Chiara, et al.
Publicado: (2020)

Valley phonons and exciton complexes in a monolayer semiconductor
por: He, Minhao, et al.
Publicado: (2020)

Effective Negative Diffusion of Singlet Excitons in Organic Semiconductors
por: Berghuis, Anton Matthijs, et al.
Publicado: (2021)

Intrinsic donor-bound excitons in ultraclean monolayer semiconductors
por: Rivera, Pasqual, et al.
Publicado: (2021)

Dark exciton anti-funneling in atomically thin semiconductors
por: Rosati, Roberto, et al.
Publicado: (2021)

Angle-Insensitive Ultrathin Broadband Visible Absorber Based on Dielectric–Semiconductor–Lossy Metal Film Stacks
por: Ma, Yuanchen, et al.
Publicado: (2023)

Symmetry and symmetry-breaking in semiconductors: fine structure of exciton states
por: Hönerlage, Bernd, et al.
Publicado: (2018)

Excitons in low-dimensional semiconductors: theory numerical methods applications
por: Glutsch, Stephan
Publicado: (2004)

Controlled dynamic screening of excitonic complexes in 2D semiconductors
por: Klots, Andrey R., et al.
Publicado: (2018)

Interlayer excitons in a bulk van der Waals semiconductor
por: Arora, Ashish, et al.
Publicado: (2017)

Harnessing no-photon exciton generation chemistry to engineer semiconductor nanostructures
por: Beke, David, et al.
Publicado: (2017)

Theory of Excitons in Atomically Thin Semiconductors: Tight-Binding Approach
por: Bieniek, Maciej, et al.
Publicado: (2022)

Observation of Bose-Einstein condensates of excitons in a bulk semiconductor
por: Morita, Yusuke, et al.
Publicado: (2022)

A Sensitizer of Purpose: Generating Triplet Excitons with Semiconductor Nanocrystals
por: Weiss, Rachel, et al.
Publicado: (2022)

Interspecies exciton interactions lead to enhanced nonlinearity of dipolar excitons and polaritons in MoS(2) homobilayers
por: Louca, Charalambos, et al.
Publicado: (2023)

Cannot write session to /tmp/vufind_sessions/sess_l96dgp4uakgdms51l07t80omvr