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Study of the Cross-Influence between III-V and IV Elements Deposited in the Same MOVPE Growth Chamber
We have deposited Ge, SiGe, SiGeSn, AlAs, GaAs, InGaP and InGaAs based structures in the same metalorganic vapor phase epitaxy (MOVPE) growth chamber, in order to study the effect of the cross influence between groups IV and III-V elements on the growth rate, background doping and morphology. It is...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7956781/ https://www.ncbi.nlm.nih.gov/pubmed/33668771 http://dx.doi.org/10.3390/ma14051066 |