Study of the Cross-Influence between III-V and IV Elements Deposited in the Same MOVPE Growth Chamber

We have deposited Ge, SiGe, SiGeSn, AlAs, GaAs, InGaP and InGaAs based structures in the same metalorganic vapor phase epitaxy (MOVPE) growth chamber, in order to study the effect of the cross influence between groups IV and III-V elements on the growth rate, background doping and morphology. It is...

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Detalles Bibliográficos
Autores principales: Timò, Gianluca, Calicchio, Marco, Abagnale, Giovanni, Armani, Nicola, Achilli, Elisabetta, Cornelli, Marina, Annoni, Filippo, Schineller, Bernd, Andreani, Lucio Claudio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7956781/
https://www.ncbi.nlm.nih.gov/pubmed/33668771
http://dx.doi.org/10.3390/ma14051066

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7956781/
https://www.ncbi.nlm.nih.gov/pubmed/33668771
http://dx.doi.org/10.3390/ma14051066

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