Surface Analysis of TMCTS-Based SiOC(H) Low-k Dielectrics in Post-Etch Strip of ACL Hardmask

The miniaturization of devices requires the introduction of a high aspect ratio through patterning in the Damascene copper interconnect process. The high aspect ratio etch process employs hardmasks, such as amorphous carbon, that can withstand high-powered plasma exposure. When an etch hardmask is r...

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Detalles Bibliográficos
Autores principales: Park, Min Kyu, Song, Wan Soo, Kim, Min Ho, Hong, Sang Jeen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7957736/
https://www.ncbi.nlm.nih.gov/pubmed/33670915
http://dx.doi.org/10.3390/ma14051144

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7957736/
https://www.ncbi.nlm.nih.gov/pubmed/33670915
http://dx.doi.org/10.3390/ma14051144

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