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Surface Analysis of TMCTS-Based SiOC(H) Low-k Dielectrics in Post-Etch Strip of ACL Hardmask

The miniaturization of devices requires the introduction of a high aspect ratio through patterning in the Damascene copper interconnect process. The high aspect ratio etch process employs hardmasks, such as amorphous carbon, that can withstand high-powered plasma exposure. When an etch hardmask is r...

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Detalles Bibliográficos
Autores principales:	Park, Min Kyu, Song, Wan Soo, Kim, Min Ho, Hong, Sang Jeen
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7957736/ https://www.ncbi.nlm.nih.gov/pubmed/33670915 http://dx.doi.org/10.3390/ma14051144

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