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High Power Impulse Magnetron Sputtering of In(2)O(3)/Sn Cold Sprayed Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In(2)O(3) and oxidized Sn powders were mix...

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Detalles Bibliográficos
Autores principales: Winnicki, Marcin, Wiatrowski, Artur, Mazur, Michał
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7961378/
https://www.ncbi.nlm.nih.gov/pubmed/33807798
http://dx.doi.org/10.3390/ma14051228
Descripción
Sumario:High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In(2)O(3) and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In(2)O(3)/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O(2): (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O(2) mixture, together with the lowest resistivity of 0.03 Ω·cm.