Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF Sputter

In this study, static induction transistors (SITs) with beta gallium oxide (β-Ga(2)O(3)) channels are grown on a p-epi silicon carbide (SiC) layer via radio frequency sputtering. The Ga(2)O(3) films are subjected to UV/ozone treatment, which results in reduced oxygen vacancies in the X-ray photoelec...

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Detalles Bibliográficos
Autores principales: Shin, Myeong-Cheol, Lee, Young-Jae, Kim, Dong-Hyeon, Jung, Seung-Woo, Schweitz, Michael A., Shin, Weon Ho, Oh, Jong-Min, Park, Chulhwan, Koo, Sang-Mo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7962954/
https://www.ncbi.nlm.nih.gov/pubmed/33800449
http://dx.doi.org/10.3390/ma14051296

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7962954/
https://www.ncbi.nlm.nih.gov/pubmed/33800449
http://dx.doi.org/10.3390/ma14051296

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