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A scheme for enabling the ultimate speed of threshold switching in phase change memory devices
Phase change materials exhibit threshold switching (TS) that establishes electrical conduction through amorphous material followed by Joule heating leading to its crystallization (set). However, achieving picosecond TS is one of the key challenges for realizing non-volatile memory operations closer...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7969762/ https://www.ncbi.nlm.nih.gov/pubmed/33731824 http://dx.doi.org/10.1038/s41598-021-85690-9 |