Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors

A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide...

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Detalles Bibliográficos
Autores principales: Geiger, Michael, Hagel, Marion, Reindl, Thomas, Weis, Jürgen, Weitz, R. Thomas, Solodenko, Helena, Schmitz, Guido, Zschieschang, Ute, Klauk, Hagen, Acharya, Rachana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7973517/
https://www.ncbi.nlm.nih.gov/pubmed/33737629
http://dx.doi.org/10.1038/s41598-021-85517-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7973517/
https://www.ncbi.nlm.nih.gov/pubmed/33737629
http://dx.doi.org/10.1038/s41598-021-85517-7

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