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Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors
A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7973517/ https://www.ncbi.nlm.nih.gov/pubmed/33737629 http://dx.doi.org/10.1038/s41598-021-85517-7 |