Extended Hückel Semi-Empirical Approach as an Efficient Method for Structural Defects Analysis in 4H-SiC

This paper presents an efficient method to calculate the influence of structural defects on the energy levels and energy band-gap for the 4H-SiC semiconductor. The semi-empirical extended Hückel method was applied to both ideal 4H-SiC crystal and different structures with defects like vacancies, sta...

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Detalles Bibliográficos
Autores principales: Wozny, Janusz, Kovalchuk, Andrii, Podgorski, Jacek, Lisik, Zbigniew
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7975987/
https://www.ncbi.nlm.nih.gov/pubmed/33800714
http://dx.doi.org/10.3390/ma14051247

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7975987/
https://www.ncbi.nlm.nih.gov/pubmed/33800714
http://dx.doi.org/10.3390/ma14051247

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