Impact of device scaling on the electrical properties of MoS(2) field-effect transistors

Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fab...

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Detalles Bibliográficos
Autores principales: Arutchelvan, Goutham, Smets, Quentin, Verreck, Devin, Ahmed, Zubair, Gaur, Abhinav, Sutar, Surajit, Jussot, Julien, Groven, Benjamin, Heyns, Marc, Lin, Dennis, Asselberghs, Inge, Radu, Iuliana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7987965/
https://www.ncbi.nlm.nih.gov/pubmed/33758215
http://dx.doi.org/10.1038/s41598-021-85968-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7987965/
https://www.ncbi.nlm.nih.gov/pubmed/33758215
http://dx.doi.org/10.1038/s41598-021-85968-y

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