Cargando…

Impact of device scaling on the electrical properties of MoS(2) field-effect transistors

Two-dimensional semiconducting materials are considered as ideal candidates for ultimate device scaling. However, a systematic study on the performance and variability impact of scaling the different device dimensions is still lacking. Here we investigate the scaling behavior across 1300 devices fab...

Descripción completa

Detalles Bibliográficos
Autores principales:	Arutchelvan, Goutham, Smets, Quentin, Verreck, Devin, Ahmed, Zubair, Gaur, Abhinav, Sutar, Surajit, Jussot, Julien, Groven, Benjamin, Heyns, Marc, Lin, Dennis, Asselberghs, Inge, Radu, Iuliana
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Nature Publishing Group UK 2021
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7987965/ https://www.ncbi.nlm.nih.gov/pubmed/33758215 http://dx.doi.org/10.1038/s41598-021-85968-y

Ejemplares similares

On current transients in MoS(2) Field Effect Transistors
por: Macucci, Massimo, et al.
Publicado: (2017)

Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics
por: Nam, Hongsuk, et al.
Publicado: (2015)

Advances in MoS(2)-Based Field Effect Transistors (FETs)
por: Tong, Xin, et al.
Publicado: (2015)

A Photoelectric-Stimulated MoS(2) Transistor for Neuromorphic Engineering
por: Wang, Shuiyuan, et al.
Publicado: (2019)

Hysteresis in As-Synthesized MoS(2) Transistors: Origin and Sensing Perspectives
por: Marquez, Carlos, et al.
Publicado: (2021)

Probing the Field-Effect Transistor with Monolayer MoS(2) Prepared by APCVD
por: Han, Tao, et al.
Publicado: (2019)

Optoelectronic synapse using monolayer MoS(2) field effect transistors
por: Islam, Molla Manjurul, et al.
Publicado: (2020)

Benchmarking monolayer MoS(2) and WS(2) field-effect transistors
por: Sebastian, Amritanand, et al.
Publicado: (2021)

Tabletop Fabrication of High-Performance MoS(2) Field-Effect Transistors
por: Cho, Ungrae, et al.
Publicado: (2022)

Effects of Charge Trapping at the MoS(2)–SiO(2) Interface on the Stability of Subthreshold Swing of MoS(2) Field Effect Transistors
por: Huang, Xinnan, et al.
Publicado: (2020)

Polarity control in WSe(2) double-gate transistors
por: Resta, Giovanni V., et al.
Publicado: (2016)

Influence of post-annealing on the off current of MoS(2) field-effect transistors
por: Namgung, Seok Daniel, et al.
Publicado: (2015)

Extrinsic Origin of Persistent Photoconductivity in Monolayer MoS(2) Field Effect Transistors
por: Wu, Yueh-Chun, et al.
Publicado: (2015)

Pinch-Off Formation in Monolayer and Multilayers MoS(2) Field-Effect Transistors
por: Vaknin, Yonatan, et al.
Publicado: (2019)

Monolayer MoS(2) Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors
por: Ryou, Junga, et al.
Publicado: (2016)

Highly Sensitive Photodetectors Based on Monolayer MoS(2) Field-Effect Transistors
por: Li, Yuning, et al.
Publicado: (2022)

Electron Irradiation of Metal Contacts in Monolayer MoS(2) Field-Effect Transistors
por: Pelella, Aniello, et al.
Publicado: (2020)

Raman Spectroscopy-Assisted Characterization of Nanoform MoS(2) Thin Film Transistor
por: Saminathan, Rajasekaran, et al.
Publicado: (2022)

Evolution Application of Two-Dimensional MoS(2)-Based Field-Effect Transistors
por: Wang, Chunlan, et al.
Publicado: (2022)

Modifying the Power and Performance of 2-Dimensional MoS(2) Field Effect Transistors
por: Zhuo, Fulin, et al.
Publicado: (2023)

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS(2) Heterojunctions
por: Tian, He, et al.
Publicado: (2014)

Impact of contact resistance on the electrical properties of MoS(2) transistors at practical operating temperatures
por: Giannazzo, Filippo, et al.
Publicado: (2017)

High-mobility junction field-effect transistor via graphene/MoS(2) heterointerface
por: Kim, Taesoo, et al.
Publicado: (2020)

Integrated contact lens sensor system based on multifunctional ultrathin MoS(2) transistors
por: Guo, Shiqi, et al.
Publicado: (2021)

Atomic threshold-switching enabled MoS(2) transistors towards ultralow-power electronics
por: Hua, Qilin, et al.
Publicado: (2020)

Influence of the hBN Dielectric Layers on the Quantum Transport Properties of MoS(2) Transistors
por: Fiore, Sara, et al.
Publicado: (2022)

Edge-Contact MoS(2) Transistors Fabricated Using Thermal Scanning Probe Lithography
por: Conde-Rubio, Ana, et al.
Publicado: (2022)

Evolution of inter-layer coupling in artificially stacked bilayer MoS(2)
por: Sarkar, Suman, et al.
Publicado: (2019)

Transistores MOS : teoría y práctica
por: Böhm, Markus
Publicado: (1986)

Electronic properties of MoS(2)/MoO(x) interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts
por: K. C., Santosh, et al.
Publicado: (2016)

Fabrication and electrical properties of MoS(2) nanodisc-based back-gated field effect transistors
por: Gu, Weixia, et al.
Publicado: (2014)

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS(2) Heterostructured Transistors
por: Qiu, Dongri, et al.
Publicado: (2015)

Charge transport in ion-gated mono-, bi-, and trilayer MoS(2) field effect transistors
por: Chu, Leiqiang, et al.
Publicado: (2014)

Gate Tunable Transport in Graphene/MoS(2)/(Cr/Au) Vertical Field-Effect Transistors
por: Nazir, Ghazanfar, et al.
Publicado: (2017)

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS(2) transistor
por: Li, Xiao-Xi, et al.
Publicado: (2017)

Ambient effects on electrical characteristics of CVD-grown monolayer MoS(2) field-effect transistors
por: Ahn, Jae-Hyuk, et al.
Publicado: (2017)

A Horizontal-Gate Monolayer MoS(2) Transistor Based on Image Force Barrier Reduction
por: Yang, Kun, et al.
Publicado: (2019)

Schottky Barrier Height and Image Force Lowering in Monolayer MoS(2) Field Effect Transistors
por: Vaknin, Yonatan, et al.
Publicado: (2020)

Multifunctional computing-in-memory SRAM cells based on two-surface-channel MoS(2) transistors
por: Wang, Fan, et al.
Publicado: (2021)

Sensor behavior of MoS(2) field-effect transistor with light injection toward chemical recognition
por: Alam, Md Iftekharul, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_h8hd9hp2p9a31c3meq7j2i9eeo