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Localized electronic vacancy level and its effect on the properties of doped manganites
Oxygen vacancies are common to most metal oxides and usually play a crucial role in determining the properties of the host material. In this work, we perform ab initio calculations to study the influence of vacancies in doped manganites [Formula: see text] , varying both the vacancy concentration an...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7988069/ https://www.ncbi.nlm.nih.gov/pubmed/33758221 http://dx.doi.org/10.1038/s41598-021-85945-5 |