Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography

GaN nanorods (NRds) with axial InGaN/GaN MQWs insertions are synthesized by an original cost-effective and large-scale nanoimprint-lithography process from an InGaN/GaN MQWs layer grown on c-sapphire substrates. By design, such NRds exhibit a single emission due to the c-axis MQWs. A systematic stud...

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Detalles Bibliográficos
Autores principales: Avit, Geoffrey, Robin, Yoann, Liao, Yaqiang, Nan, Hu, Pristovsek, Markus, Amano, Hiroshi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7990954/
https://www.ncbi.nlm.nih.gov/pubmed/33762623
http://dx.doi.org/10.1038/s41598-021-86139-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7990954/
https://www.ncbi.nlm.nih.gov/pubmed/33762623
http://dx.doi.org/10.1038/s41598-021-86139-9

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