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Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
GaN nanorods (NRds) with axial InGaN/GaN MQWs insertions are synthesized by an original cost-effective and large-scale nanoimprint-lithography process from an InGaN/GaN MQWs layer grown on c-sapphire substrates. By design, such NRds exhibit a single emission due to the c-axis MQWs. A systematic stud...
Autores principales: | Avit, Geoffrey, Robin, Yoann, Liao, Yaqiang, Nan, Hu, Pristovsek, Markus, Amano, Hiroshi |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7990954/ https://www.ncbi.nlm.nih.gov/pubmed/33762623 http://dx.doi.org/10.1038/s41598-021-86139-9 |
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