Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source

[Image: see text] The bandgap dependence on the number of atomic layers of some families of two-dimensional (2D) materials can be exploited to engineer and use lateral heterostructures (LHs) as high-performance field-effect transistors (FETs). This option can provide very good lattice matching as we...

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Detalles Bibliográficos
Autores principales: Marin, Enrique G., Marian, Damiano, Perucchini, Marta, Fiori, Gianluca, Iannaccone, Giuseppe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7993756/
https://www.ncbi.nlm.nih.gov/pubmed/31935062
http://dx.doi.org/10.1021/acsnano.9b08489

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7993756/
https://www.ncbi.nlm.nih.gov/pubmed/31935062
http://dx.doi.org/10.1021/acsnano.9b08489

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