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Lateral Heterostructure Field-Effect Transistors Based on Two-Dimensional Material Stacks with Varying Thickness and Energy Filtering Source
[Image: see text] The bandgap dependence on the number of atomic layers of some families of two-dimensional (2D) materials can be exploited to engineer and use lateral heterostructures (LHs) as high-performance field-effect transistors (FETs). This option can provide very good lattice matching as we...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American
Chemical Society
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7993756/ https://www.ncbi.nlm.nih.gov/pubmed/31935062 http://dx.doi.org/10.1021/acsnano.9b08489 |