Branched High Aspect Ratio Nanostructures Fabricated by Focused Helium Ion Beam Induced Deposition of an Insulator

Helium ion beam induced deposition using the gaseous precursor pentamethylcyclopentasiloxane is employed to fabricate high aspect ratio insulator nanostructures (nanopillars and nanocylinders) that exhibit charge induced branching. The branched nanostructures are analyzed by transmission electron mi...

Descripción completa

Detalles Bibliográficos
Autor principal: Allen, Frances I.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7996577/
https://www.ncbi.nlm.nih.gov/pubmed/33668907
http://dx.doi.org/10.3390/mi12030232

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7996577/
https://www.ncbi.nlm.nih.gov/pubmed/33668907
http://dx.doi.org/10.3390/mi12030232

Ejemplares similares