Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors

[Image: see text] We report the fabrication and electrical characterization of germanium arsenide (GeAs) field-effect transistors with ultrathin channels. The electrical transport is investigated in the 20–280 K temperature range, revealing that the p-type electrical conductivity and the field-effec...

Descripción completa

Detalles Bibliográficos
Autores principales: Grillo, Alessandro, Di Bartolomeo, Antonio, Urban, Francesca, Passacantando, Maurizio, Caridad, Jose M., Sun, Jianbo, Camilli, Luca
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7997104/
https://www.ncbi.nlm.nih.gov/pubmed/32100522
http://dx.doi.org/10.1021/acsami.0c00348

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7997104/
https://www.ncbi.nlm.nih.gov/pubmed/32100522
http://dx.doi.org/10.1021/acsami.0c00348

Ejemplares similares