Electrical Characterizations of Planar Ga(2)O(3) Schottky Barrier Diodes

In this work, a Schottky barrier diode (SBD) is fabricated and demonstrated based on the edge-defined film-fed grown (EFG) Ga(2)O(3) crystal substrate. At the current stage, for high resistance un-doped Ga(2)O(3) films and/or bulk substrates, the carrier concentration (and other electrical parameter...

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Detalles Bibliográficos
Autores principales: Zhang, Shiyu, Liu, Zeng, Liu, Yuanyuan, Zhi, Yusong, Li, Peigang, Wu, Zhenping, Tang, Weihua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7999765/
https://www.ncbi.nlm.nih.gov/pubmed/33802423
http://dx.doi.org/10.3390/mi12030259

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7999765/
https://www.ncbi.nlm.nih.gov/pubmed/33802423
http://dx.doi.org/10.3390/mi12030259

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